Academic Council

The Institute has an Academic Council. 

Director: Doctor of Phys.-math. Sci., Professor,  Amiran Bibilashvili 

Deputy Director: Ph.D.Revaz Melkadze

Chief accountant; lawyer; purchase coordinator; office manager;

programmer; security department worker

Micro-and Optoelectronics Department (laboratories 1; 2; 3)  


1) Technological laboratory of semiconductor devices and integrated circuits:

The research is carried out on gallium arsenide and related compounds (GaAs, GaAlAs): a) development of digital and analog integrated microcircuits (IMC), b) chemical and plasma-chemical treatment of the substrate surface, c) vacuum deposition of metals and dielectrics, d) photolithography, e) scribing, and e) packaging (the work is conducted in clean rooms). After each stage and packaging, optical and electro-physical measurements are performed.

2) Laboratory of Semiconductor Materials:

The following work is carried out:

a) Production and study of GaAs materials using molecular-beam epitaxy;

b) Study of SiGe quantum dots;

c) Conduction and study of ion doping processes in Si and GaAs followed by annealing;

d) Measurements of electro-physical parameters of the formed structures.

3) Laboratory of semiconductor devices and integrated circuits design:

To create semiconductor devices and their elements (transistors, resistors, capacitors, element connections) the following work is carried out:

a) circuit design calculations, b) development of  topology c) simulation, or design using different software tools, d) measurements of dynamic high-frequency parameters of digital and analog integrated circuits.


4) Laboratory of semiconductor structures and devices:

Research on silicon and dielectrics is carried out: a) vacuum deposition of low-melting and refractory metals by thermo-resistive, electron-beam and magnetron methods; b) development of technologies for producing thin films of oxides and nitrides (SiO2, Al2O3, TiO2, HfO2, ZrO2, Ta2O5, Nb2O5, GaN, AlN, TiN, FeN) by low temperature UV-light stimulated catalytic, plasma and magnetron methods, c) formation of integrated circuits and micro- and nanoelements on the basis of the obtained oxides and nitrides and investigation of their electrical, optical, structural and dielectric parameters.


5) Laboratory of low-temperature stimulated nanotechnologies:


Research is under way and enabling low-temperature technologies are being developed that provide  substantial improvement in the physical parameters of micro- and nanoelectronic devices and significant reduction in the cost of their fabrication. Low-temperature technological processes are carried out using photo- and catalyst-stimulated methods.