Sizes of a GaAs diode for pixel detectors based on semiconductor materials: 2,7/2,7mm2 Leakage currents: 100nA

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Sizes of a GaAs diode for pixel detectors based on semiconductor materials: 2,7/2,7mm2 Leakage currents: 100nA

Sizes of a GaAs diode for pixel detectors based on

semiconductor materials: 2,7/2,7mm²

Leakage currents: 100nA

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LEPL Institute of Micro-and Nanoelectronics (IMNE) was established in December 28, 2011. It was founded on the basis of the department of semiconductor microelectronics of the Faculty of Physics of Iv.Javakhishvili Tbilisi State University and the Research Institute “MION

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